Affiliation:
1. Chemistry and Materials Desing Group Institute for Electronics Department of Information Technology and Electrical Engineering ETH Zurich Gloriastrasse 35 Zurich CH‐8092 Switzerland
2. Integrated Systems Laboratory Department of Information Technology and Electrical Engineering ETH Zurich Gloriastrasse 35 Zurich CH‐8092 Switzerland
3. Laboratory for Thin Films and Photovoltaics Empa – Swiss Federal Laboratories for Materials Science and Technology Ueberlandstrasse 129 Dübendorf 8600 Switzerland
4. Materials and Device Engineering Group Institute for Electronics Department of Information Technology and Electrical Engineering ETH Zurich Gloriastrasse 35 Zurich CH‐8092 Switzerland
Abstract
AbstractPhase change memory (PCM) is among the most promising candidates for the next generation of storage‐class and main memory systems in the computing era beyond Moore's law. However, the widespread installment of PCM devices is limited by the high price‐per‐bit and complex fabrication process. In this paper, it is shown that functional PCM memory devices can be printed, proving low‐cost avenues for non‐silicon memory technologies. Taking Ge‐Sb‐Te (GST) as a case study, PCM inks are prepared and optimize their structural, rheological, and printing parameters. GST layers are then printed onto PCM devices in the planar configuration, showing excellent performance, such as non‐volatility, resistivity contrast, low cycle‐to‐cycle variability, and endurance of at least 100 cycles. This paper provides a novel approach to liquid‐based engineered PCM devices through inkjet printing, enabling patterned memory layers, lower price‐per‐bit, and customizable multi‐material PCM arrays.
Funder
Werner Siemens-Stiftung
H2020 European Research Council