Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions-Reference-Cited by-同舟云学术

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Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions

Published:2017-01-17 Issue:2 Volume:11 Page:1704-1711
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Trommer Jens¹²^ORCID,Heinzig André²³,Mühle Uwe⁴⁵,Löffler Markus²⁴,Winzer Annett¹,Jordan Paul M.¹,Beister Jürgen¹,Baldauf Tim²³,Geidel Marion²³,Adolphi Barbara³,Zschech Ehrenfried⁵,Mikolajick Thomas¹²³^ORCID,Weber Walter M.¹²

Affiliation:

1. NaMLab gGmbH, Noethnitzer Straße 64, D-01187 Dresden, Germany

2. Center for Advancing Electronics Dresden (CfAED), TU Dresden, D-01062 Dresden, Germany

3. Institute of Semiconductor and Microsystems (IHM), TU Dresden, D-01062 Dresden, Germany

4. Dresden Center for Nanoanalysis (DCN), TU Dresden, D-01062 Dresden, Germany

5. Fraunhofer Institute for Ceramic Technologies and Systems (IKTS), D-01277 Dresden, Germany

Funder

Bundesministerium f?r Bildung und Forschung

Deutsche Forschungsgemeinschaft

Center for Advancing Electronics Dresden, Technische Universit?t Dresden

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b07531

Reference40 articles.

1. Advancing CMOS beyond the Si roadmap with Ge and III/V devices

2. Ge/Si nanowire heterostructures as high-performance field-effect transistors

3. Germanium Based Field-Effect Transistors: Challenges and Opportunities

4. Germanium-based transistors for future high performance and low power logic applications

5. First demonstration of Ge nanowire CMOS circuits: Lowest SS of 64 mV/dec, highest gmax of 1057 μS/μm in Ge nFETs and highest maximum voltage gain of 54 V/V in Ge CMOS inverters

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