Inversion Domain Boundaries in GaN Wires Revealed by Coherent Bragg Imaging-Reference-Cited by-同舟云学术

Inversion Domain Boundaries in GaN Wires Revealed by Coherent Bragg Imaging

Published:2015-09-02 Issue:9 Volume:9 Page:9210-9216
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Labat Stéphane¹,Richard Marie-Ingrid¹²,Dupraz Maxime³⁴,Gailhanou Marc¹,Beutier Guillaume³⁴,Verdier Marc³⁴,Mastropietro Francesca¹,Cornelius Thomas W.¹,Schülli Tobias U.²,Eymery Joël⁵⁶,Thomas Olivier¹

Affiliation:

1. IM2NP UMR 7334, Aix Marseille Université, CNRS, Université de Toulon, F-13397 Marseille, France

2. ID01 ESRF, F-38043 Grenoble, France

3. Université Grenoble Alpes, SIMAP, F-38000 Grenoble, France

4. CNRS, SIMAP, F-38000 Grenoble, France

5. Université Grenoble Alpes, F-38000 Grenoble, France

6. “Nanophysique et Semiconducteurs” Group, CEA, INAC-SP2M, F-38000 Grenoble, France

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b03857

Reference33 articles.

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2. Dislocations at atomic scale

3. Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy

4. Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate

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