Polarized Tunneling Transistor for Ultrafast Memory-Reference-Cited by-同舟云学术

Polarized Tunneling Transistor for Ultrafast Memory

Published:2023-06-20 Issue:13 Volume:17 Page:12374-12382
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chen Jing¹²^ORCID,Dun Guanhua¹^ORCID,Hu Jianguo¹^ORCID,Lin Zhu¹,Wang Yuhao¹,Lu Tian¹,Li Ping¹,Wei Tiantian¹,Zhu Junqiang³,Wang Jing³,Li Xiyou¹,Wu Xiao-Ming¹,Yang Yi¹,Ren Tian-Ling¹^ORCID

Affiliation:

1. School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China

2. Institute of Marine Science and Technology, Shandong University, Qingdao, Shandong 266237, China

3. State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, China

Funder

National Key Research and Development Program of China

Guoqiang Institute, Tsinghua University

Tsinghua University

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c01786

Reference53 articles.

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2. Prospective of Semiconductor Memory Devices: from Memory System to Materials

3. International Technology Roadmap for Semiconductors 2.0 (ITRS); http://www.itrs2.net/ (24-May-2016).

4. A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to Improve the Random Read Latency With tProg = 75 μs and tR = 4 μs

5. Electric Field Effect in Atomically Thin Carbon Films

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