Electronic Band Tuning and Multivalley Raman Scattering in Monolayer Transition Metal Dichalcogenides at High Pressures-Reference-Cited by-同舟云学术

Electronic Band Tuning and Multivalley Raman Scattering in Monolayer Transition Metal Dichalcogenides at High Pressures

Published:2022-04-25 Issue:5 Volume:16 Page:8064-8075
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Pimenta Martins Luiz G.¹^ORCID,Carvalho Bruno R.²^ORCID,Occhialini Connor A.¹,Neme Natália P.³^ORCID,Park Ji-Hoon⁴,Song Qian¹,Venezuela Pedro⁵,Mazzoni Mário S. C.⁶^ORCID,Matos Matheus J. S.⁷,Kong Jing⁴^ORCID,Comin Riccardo¹

Affiliation:

1. Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

2. Departamento de Física, Universidade Federal do Rio Grande do Norte, Natal, Rio Grande do Norte 59078-970, Brazil

3. Zernike Institute for Advanced Materials and Stratingh Institute for Chemistry, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands

4. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

5. Instituto de Física, Universidade Federal Fluminense, Niterói, Rio de Janeiro 24210-346, Brazil

6. Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 31270-901, Brazil

7. Departamento de Física, Universidade Federal de Ouro Preto, Ouro Preto, Minas Gerais 35400-000, Brazil

Funder

Instituto Nacional de Ciência e Tecnologia em Nanomateriais de Carbono

Rijksuniversiteit Groningen

Fundação de Amparo à Pesquisa do Estado de Minas Gerais

Army Research Office

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Universidade Federal de Ouro Preto

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c01065

Reference69 articles.

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2. Valleytronics in 2D materials

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides

5. k · p theory for two-dimensional transition metal dichalcogenide semiconductors

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