Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism-Reference-Cited by-同舟云学术

Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism

Published:2016-02-08 Issue:2 Volume:10 Page:2424-2435
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Yao Maoqing¹,Sheng Chunyang¹,Ge Mingyuan¹,Chi Chun-Yung¹,Cong Sen¹,Nakano Aiichiro¹,Dapkus P. Daniel¹,Zhou Chongwu¹

Affiliation:

1. Ming Hsieh Department of Electrical Engineering, ‡Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, and Department of Chemical Engineering and Materials Science, §Mork Family Department of Chemical Engineering and Materials Science, and ∥Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089, United States

Funder

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b07232

Reference116 articles.

1. Logic Gates and Computation from Assembled Nanowire Building Blocks

2. Growth of nanowire superlattice structures for nanoscale photonics and electronics

3. Epitaxial core–shell and core–multishell nanowire heterostructures