Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices-Reference-Cited by-同舟云学术

Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices

Published:2024-01-24 Issue:3 Volume:7 Page:3032-3041
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Jeong Hyowon W.¹^ORCID,Ajay Akhil¹,Döblinger Markus²,Sturm Sebastian²,Gómez Ruiz Mikel³,Zell Richard²,Mukhundhan Nitin¹,Stelzner Daniel¹^ORCID,Lähnemann Jonas³,Müller-Caspary Knut²^ORCID,Finley Jonathan J.¹,Koblmüller Gregor¹^ORCID

Affiliation:

1. Walter Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany

2. Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany

3. Paul-Drude-Institute for Solid State Electronics, Leibniz-Institut Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft

Bayerisches Staatsministerium f?r Wissenschaft und Kunst

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c05392

Reference69 articles.

1. GaAs Core−Shell Nanowires for Photovoltaic Applications

2. GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si

3. A III–V nanowire channel on silicon for high-performance vertical transistors

4. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

5. Single-nanowire solar cells beyond the Shockley–Queisser limit

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