High-κ Wide-Gap Layered Dielectric for Two-Dimensional van der Waals Heterostructures-Reference-Cited by-同舟云学术

High-κ Wide-Gap Layered Dielectric for Two-Dimensional van der Waals Heterostructures

Published:2024-04-01 Issue:15 Volume:18 Page:10397-10406
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Söll Aljoscha¹,Lopriore Edoardo²³^ORCID,Ottesen Asmund²³,Luxa Jan¹^ORCID,Pasquale Gabriele²³^ORCID,Sturala Jiri¹,Hájek František⁴,Jarý Vítězslav⁴^ORCID,Sedmidubský David¹,Mosina Kseniia¹^ORCID,Sokolović Igor⁵⁶^ORCID,Rasouli Saeed⁶,Grasser Tibor⁵,Diebold Ulrike⁶^ORCID,Kis Andras²³^ORCID,Sofer Zdeněk¹^ORCID

Affiliation:

1. Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28, Prague 6, Czech Republic

2. Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

3. Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

4. Institute of Physics of the Czech Academy of Sciences, v.v.i., Cukrovarnická 10, 162 00, Prague 6, Czech Republic

5. Institute of Microelectronics, TU Wien, Gußhausstraße 27−29, 1040 Vienna, Austria

6. Institute of Applied Physics, TU Wien, Wiedner Hauptstraße 8−10, 1040 Vienna, Austria

Funder

Ministerstvo ?kolstv?, Ml?de?e a Telov?chovy

Austrian Science Fund

Grantov? Agentura Cesk? Republiky

Vysok? ?kola Chemicko-technologick? v Praze

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c10411

Reference45 articles.

1. International Roadmap for Devices and Systems (IRDS) 2021 Edition - IEEE IRDS. https://irds.ieee.org/editions/2021, accessed 13.3.2024.

2. Graphene and two-dimensional materials for silicon technology

3. 2D materials for future heterogeneous electronics

4. Insulators for 2D nanoelectronics: the gap to bridge

5. Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

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