Doping-Mediated Lattice Engineering of Monolayer ReS2 for Modulating In-Plane Anisotropy of Optical and Transport Properties-Reference-Cited by-同舟云学术

Doping-Mediated Lattice Engineering of Monolayer ReS2 for Modulating In-Plane Anisotropy of Optical and Transport Properties

Published:2021-07-23 Issue:8 Volume:15 Page:13770-13780
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ghimire Ganesh¹,Dhakal Krishna P.¹^ORCID,Choi Wooseon¹,Esthete Yonas Assefa¹,Kim Seon Je¹,Tran Trang Thu¹,Lee Hyoyoung²³^ORCID,Yang Heejun¹⁴,Duong Dinh Loc¹²^ORCID,Kim Young-Min¹²^ORCID,Kim Jeongyong¹^ORCID

Affiliation:

1. Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea

2. Center for Integrated Nanostructure Physics, Institute for Basic Science, Suwon 16419, Republic of Korea

3. Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea

4. Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea

Funder

Samsung

National Research Foundation of Korea

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c05316

Reference47 articles.

1. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

2. Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy

3. In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy

4. Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2

5. Ultrafast quantum beats of anisotropic excitons in atomically thin ReS2

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