Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy-Reference-Cited by-同舟云学术

Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy

Published:2015-09-28 Issue:11 Volume:9 Page:11249-11257
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lin Yung-Chang¹,Komsa Hannu-Pekka,Yeh Chao-Hui²,Björkman Torbjörn³,Liang Zheng-Yong,Ho Ching-Hwa,Huang Ying-Sheng,Chiu Po-Wen²,Krasheninnikov Arkady V.⁴,Suenaga Kazu¹

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan

2. Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

3. Department of Physics, Åbo Akademi, FI-20500 Turku, Finland

4. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany

Funder

National Tsing Hua University

Japan Science and Technology Agency

Suomen Akatemia

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsnano.5b04851

Reference46 articles.

1. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Structure of single-molecular-layerMoS2

4. Real-space imaging of single-layerMoS2by scanning tunneling microscopy

5. Electron Diffraction Study of Intercalation Compounds Derived from 1T-MoS2

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