Photochemical Hydrogen Doping Induced Embedded Two-Dimensional Metallic Channel Formation in InGaZnO at Room Temperature-Reference-Cited by-同舟云学术

Photochemical Hydrogen Doping Induced Embedded Two-Dimensional Metallic Channel Formation in InGaZnO at Room Temperature

Published:2015-10-01 Issue:10 Volume:9 Page:9964-9973
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kim Myeong-Ho¹,Lee Young-Ahn²,Kim Jinseo²,Park Jucheol³,Ahn Seungbae⁴,Jeon Ki-Joon⁴,Kim Jeong Won⁵,Choi Duck-Kyun¹,Seo Hyungtak²

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea

2. Department of Energy Systems Research & Department of Materials Science and Engineering, Ajou University, Suwon 443-739, Republic of Korea

3. Gyeongbuk Science Technology Promotion Center, Gumi Electronics & Information Technology Research Institute, Gumi 730-853, Gyeongbuk Republic of Korea

4. Department of Environmental Engineering, Inha University, Incheon 402-751, Republic of Korea

5. Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b05342

Reference27 articles.

1. Discovery-based design of transparent conducting oxide films

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

4. Reduced and n-Type Doped TiO2: Nature of Ti3+ Species

5. Oxygen vacancies in ZnO

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