Carrier Trapping in Wrinkled 2D Monolayer MoS<sub>2</sub> for Ultrathin Memory-Reference-Cited by-同舟云学术

Carrier Trapping in Wrinkled 2D Monolayer MoS₂ for Ultrathin Memory

Published:2022-03-24 Issue:4 Volume:16 Page:6309-6316
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zhang Rongjie¹,Lai Yongjue¹,Chen Wenjun¹,Teng Changjiu¹,Sun Yujie¹,Yang Liusi¹,Wang Jingyun¹,Liu Bilu¹^ORCID,Cheng Hui-Ming¹²³^ORCID

Affiliation:

1. Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China

2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China

3. Faculty of Materials and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China

Funder

Government of Guangdong Province

Shenzhen Fundamental Research Program

National Natural Science Foundation of China

National Science Fund for Distinguished Young Scholars

Bureau of Industry and Information Technology of Shenzhen

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c00350