Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P

Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P–N Junctions

Published:2019-08-19 Issue:9 Volume:13 Page:10490-10498
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Mandyam Srinivas V.¹^ORCID,Zhao Meng-Qiang¹^ORCID,Masih Das Paul¹^ORCID,Zhang Qicheng¹,Price Christopher C.²^ORCID,Gao Zhaoli¹^ORCID,Shenoy Vivek B.²,Drndić Marija¹,Johnson Alan T. Charlie¹^ORCID

Affiliation:

1. Department of Physics and Astronomy, University of Pennsylvania, 209 South 33rd Street, Philadelphia, Pennsylvania 19104, United States

2. Department of Materials Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, Pennsylvania 19104, United States

Funder

Division of Emerging Frontiers in Research and Innovation

Army Research Office

Division of Civil, Mechanical and Manufacturing Innovation

National Science Foundation

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b04453

Reference63 articles.

1. Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

2. Atomically thin p–n junctions based on two-dimensional materials

3. 2D materials and van der Waals heterostructures

4. Novel Optoelectronic Devices: Transition-Metal-Dichalcogenide-Based 2D Heterostructures

5. Two-dimensional heterostructures: fabrication, characterization, and application

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