Novel Optoelectronic Devices: Transition-Metal-Dichalcogenide-Based 2D Heterostructures-Reference-Cited by-同舟云学术

Novel Optoelectronic Devices: Transition-Metal-Dichalcogenide-Based 2D Heterostructures

Published:2018-01-04 Issue:2 Volume:4 Page:1700335
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zeng Qingsheng¹^ORCID,Liu Zheng¹²³⁴^ORCID

Affiliation:

1. School of Materials Science and Engineering; Nanyang Technological University; Singapore 639798 Singapore

2. Centre for Programmable Materials; School of Materials Science and Engineering; Nanyang Technological University; Singapore 639798 Singapore

3. NOVITAS; Nanoelectronics Centre of Excellence; School of Electrical and Electronic Engineering; Nanyang Technological University; Singapore 639798 Singapore

4. CINTRA CNRS/NTU/THALES; UMI 3288, Research Techno Plaza, 50 Nanyang Drive Border X Block, Level 6 Singapore 637553 Singapore

Funder

National Research Foundation Singapore

Ministry of Education - Singapore

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference181 articles.

1. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

2. Two-dimensional atomic crystals

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Emerging Photoluminescence in Monolayer MoS2

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