Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition-Reference-Cited by-同舟云学术

Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

Published:2020-09-23 Issue:10 Volume:14 Page:12962-12971
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Gigliotti James¹²,Li Xin³⁴,Sundaram Suresh³⁴,Deniz Dogukan¹,Prudkovskiy Vladimir¹⁵,Turmaud Jean-Philippe¹,Hu Yiran¹,Hu Yue¹,Fossard Frédéric⁶^ORCID,Mérot Jean-Sébastien⁶,Loiseau Annick⁶^ORCID,Patriarche Gilles⁷,Yoon Bokwon¹,Landman Uzi¹,Ougazzaden Abdallah³⁴^ORCID,Berger Claire¹⁴⁵^ORCID,de Heer Walt A.¹⁸

Affiliation:

1. School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

2. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

3. School of Electrical and Computer Engineering, Georgia Institute of Technology, GT-Lorraine, 57070 Metz, France

4. Unité Mixte Internationale 2958, CNRS-Georgia Tech, 57070 Metz, France

5. Institut Néel, CNRS-Université Grenoble Alpes, BP166, 38042 Cedex 9 Grenoble, France

6. Laboratoire d’Etude des Microstructures, ONERA-CNRS, Université Paris Saclay, BP 72, F-92322 Châtillon, France

7. Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France

8. Tianjin International Center of Nanoparticles and Nanosystems, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072, China

Funder

FACE Foundation

Air Force Office of Scientific Research

H2020 Future and Emerging Technologies

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c04164

Reference51 articles.

1. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

2. Electronic transport in two-dimensional graphene

3. Intrinsic and extrinsic performance limits of graphene devices on SiO2

4. Boron nitride substrates for high-quality graphene electronics

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