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Springer Science and Business Media LLC
Reference51 articles.
1. Schwierz, F., Pezoldt, J. & Granzner, R. Two-dimensional materials and their prospects in transistor electronics. Nanoscale 7, 8261–8283 (2015).
2. Van Bommel, A. J., Crombeen, J. E. & Van Tooren, A. LEED and Auger electron observations of the SiC(0001) surface. Surf. Sci. 48, 463–472 (1975).
3. Norimatsu, W. & Kusunoki, M. Growth of graphene from SiC{0001} surfaces and its mechanisms. Semicond. Sci. Technol. 29, 064009 (2014).
4. Nair, M. et al. Band gap opening induced by the structural periodicity in epitaxial graphene buffer layer. Nano Lett. 17, 2681–2689 (2017).
5. Turmaud, J.-P. Variable Range Hopping Conduction in the Epitaxial Graphene Buffer Layer on SiC(0001). Georgia Institute of Technology, PhD thesis (2018).
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