The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers-Reference-Cited by-同舟云学术

The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers

Published:2015-06-24 Issue:7 Volume:9 Page:7080-7084
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Keizer Joris G.¹,McKibbin Sarah R.¹,Simmons Michelle Y.¹

Affiliation:

1. Centre for Quantum Computation and Communications Technology, Australian Research Council Centre of Excellence, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia

Funder

Australian Research Council

Army Research Office

National Security Agency

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b01638

Reference22 articles.

1. Geometric Frustration of 2D Dopants in Silicon: Surpassing Electrical Saturation

2. Codoping as a measure against donor deactivation in Si:Ab initiocalculations

3. Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

4. Delta doping in silicon

5. Investigating the regrowth surface of Si:P δ-layers toward vertically stacked three dimensional devices

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