Oxygen-Deficient Oxide Growth by Subliming the Oxide Source Material: The Cause of Silicide Formation in Rare Earth Oxides on Silicon
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
2. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg400652b
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1. A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures
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5. Process–structure–property relations of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD)
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