Three-Dimensional Integration of Functional Oxides and Crystalline Silicon for Optical Neuromorphic Computing Using Nanometer-Scale Oxygen Scavenging Barriers-Reference-Cited by-同舟云学术

Three-Dimensional Integration of Functional Oxides and Crystalline Silicon for Optical Neuromorphic Computing Using Nanometer-Scale Oxygen Scavenging Barriers

Published:2021-01-21 Issue:2 Volume:4 Page:2153-2159
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Ortmann J. Elliott¹,Borisevich Albina Y.²^ORCID,Kwon Sunah³,Posadas Agham¹,Kim Moon J.³,Demkov Alexander A.¹^ORCID

Affiliation:

1. Department of Physics, The University of Texas, Austin, Texas 78712, United States

2. The Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

3. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States

Funder

Air Force Office of Scientific Research

National Research Foundation of Korea

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c03459

Reference64 articles.

1. Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon

2. Crystalline Oxides on Silicon: The First Five Monolayers

3. Band offsets of wide-band-gap oxides and implications for future electronic devices

4. Dielectric property and thermal stability of HfO2 on silicon

5. Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications

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