Origin of Rectification in Boron Nitride Heterojunctions to Silicon-Reference-Cited by-同舟云学术

Origin of Rectification in Boron Nitride Heterojunctions to Silicon

Published:2013-03-22 Issue:7 Volume:5 Page:2535-2539
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Teii Kungen¹,Hori Takuro¹,Mizusako Yusei¹,Matsumoto Seiichiro¹²

Affiliation:

1. Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

2. Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am3031129

Reference31 articles.

1. Ultraviolet luminescence spectra of boron nitride single crystals grown under high pressure and high temperature

2. High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure

3. Electrical properties and thermal stability of ion beam deposited BN thin films

4. Semiconducting cubic boron nitride

5. Electric conductivity of boron nitride thin films enhanced by in situ doping of zinc

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