High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure
Author:
Affiliation:
1. National Institute for Research in Inorganic Materials, 11 Namiki, Sakura-mura, Niihari-gun, Ibaraki 305, Japan.
Publisher
American Association for the Advancement of Science (AAAS)
Subject
Multidisciplinary
Reference13 articles.
1. Bovenkerk H. P. U.S. Patent 3735321 (1973).
2. BERZ, F, THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE, SOLID-STATE ELECTRONICS 19: 437 (1976).
3. CHRENKO, R.M., ULTRAVIOLET AND INFRARED-SPECTRA OF CUBIC BORON-NITRIDE, SOLID STATE COMMUNICATIONS 14: 511 (1974).
4. Collins, A. T., The Properties of Diamond: 79 (1979).
5. General sElectric Corporation Report 1972 72 CRD 178
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