Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface-Reference-Cited by-同舟云学术

Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface

Published:2022-01-19 Issue:4 Volume:14 Page:6131-6137
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zdanowicz Ewelina¹²^ORCID,Herman Artur P.²^ORCID,Opołczyńska Katarzyna¹³^ORCID,Gorantla Sandeep¹,Olszewski Wojciech¹,Serafińczuk Jarosław¹⁴,Hommel Detlef¹,Kudrawiec Robert¹²^ORCID

Affiliation:

1. Łukasiewicz Research Network─PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland

2. Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyspiańskiego 27, Wrocław 50-370, Poland

3. Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, Wrocław 50-204, Poland

4. Department of Nanometrology, Wrocław University of Science and Technology, Janiszewskiego 11/17, Wrocław 50-372, Poland

Funder

Narodowe Centrum Nauki

Fundacja na rzecz Nauki Polskiej

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c20352

Reference36 articles.

1. Recent Development of Boron Nitride towards Electronic Applications

2. Electric Field Effect in Atomically Thin Carbon Films

3. Photonics with hexagonal boron nitride

4. Boron nitride for excitonics, nano photonics, and quantum technologies

5. 2D materials and van der Waals heterostructures

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