Investigation of Ag and Cu Filament Formation Inside the Metal Sulfide Layer of an Atomic Switch Based on Point-Contact Spectroscopy-Reference-Cited by-同舟云学术

Investigation of Ag and Cu Filament Formation Inside the Metal Sulfide Layer of an Atomic Switch Based on Point-Contact Spectroscopy

Published:2019-07-05 Issue:30 Volume:11 Page:27178-27182
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Aiba A.¹,Koizumi R.¹,Tsuruoka T.²,Terabe K.²,Tsukagoshi K.²,Kaneko S.¹,Fujii S.¹^ORCID,Nishino T.¹,Kiguchi M.¹^ORCID

Affiliation:

1. Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1 W4-10 Ookayama, Meguro-ku, Tokyo 152-8551, Japan

2. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Tsukuba, Ibaraki 305-0044, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b05523

Reference29 articles.

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4. Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer

5. Quantized conductance atomic switch

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