CuInS<sub>2</sub> quantum dots-based unipolar resistive switching for non-volatile memory applications-Reference-Cited by-同舟云学术

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CuInS₂ quantum dots-based unipolar resistive switching for non-volatile memory applications

Published:2024 Issue:21 Volume:14 Page:14910-14918
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Sharma Harshit¹²,Saini Nitish¹²,Lalita ¹²,Kaushik Divya¹²,Kumar Ajeet¹²^ORCID,Srivastava Ritu¹²^ORCID

Affiliation:

1. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India

2. CSIR-National Physical Laboratory, Dr. KS Krishnan Marg, New Delhi 110012, India

Abstract

CuInS2 QDs are employed as a functional layer in a memristive device with an Al/CuInS2/ITO configuration featuring unipolar resistive switching behavior with high on/off ratio and excellent reproducibility.

Funder

University Grants Commission

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D4RA01087F

Reference42 articles.

1. Metal–Oxide RRAM

2. Nanoionics-based resistive switching memories

3. High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

4. Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bipolar Resistive Switching Behavior in All Inorganic Lead-Free Double-Perovskite Cs$_{\text{2}}$SnI$_{\text{6}}$ Thin Film for Low-Power ReRAM;IEEE Transactions on Electron Devices;2024

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