AgBiS<sub>2</sub> quantum dot based multilevel resistive switching for low power electronics-Reference-Cited by-同舟云学术

AgBiS₂ quantum dot based multilevel resistive switching for low power electronics

Published:2023 Issue:33 Volume:11 Page:11392-11398
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sharma Harshit¹²,Saini Nitish¹²,Kumar Ajeet¹²^ORCID,Srivastava Ritu¹²^ORCID

Affiliation:

1. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India

2. CSIR-National Physical Laboratory, Dr KS Krishnan Marg, New Delhi 110012, India

Abstract

AgBiS2 quantum dots-based low-powered and bipolar resistive switching device with filamentary mechanism exhibits controlled multi-quantum conductance levels making it suitable for ultra-high dense memory application.

Funder

University Grants Commission

Council of Scientific and Industrial Research, India

Malaviya National Institute of Technology, Jaipur

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC01050C

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