Junctionless Poly-GeSn Ferroelectric Thin-Film Transistors with Improved Reliability by Interface Engineering for Neuromorphic Computing
Author:
Affiliation:
1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Taiwan Semiconductor Research Institute
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b16231
Reference45 articles.
1. Fenouillet-Beranger, C.; Mathieu, B.; Previtali, B.; Samson, M.P.; Rambal, N.; Benevent, V.; Kerdiles, S.; Barnes, J.P.; Barge, D.; Besson, P.; Kachtouli, R.; Cassé, M.; Garros, X.; Laurent, A.; Nemouchi, F.; Huet, K.; Toqué-Trésonne, I.; Lafond, D.; Dansas, H.; Aussenac, F.; Druais, G.; Perreau, P.; Richard, E.; Chhun, S.; Petitprez, E.; Guillot, N.; Deprat, F.; Pasini, L.; Brunet, L.; Lu, V.; Reita, C.; Batude, P.; Vinet, M. New Insights on Bottom Layer Thermal Stability and Laser Annealing Promises for High Performance 3D VLSI. 2014 IEEE International Electron Devices Meeting, 2014; pp 642–645.
2. High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature
3. Improved Electrical Performance and Bias Stability of Solution-Processed Active Bilayer Structure of Indium Zinc Oxide based TFT
4. Usuda, K.; Kamata, Y.; Kamimuta, Y.; Mori, T.; Koike, M.; Tezuka, T. High-Performance Tri-Gate Poly-Ge Junction-Less P- and N-MOSFETs Fabricated by Flash Lamp Annealing Process. 2014 IEEE International Electron Devices Meeting, 2014; pp 16.6.1–16.6.4.
5. Implementing P-Channel Junctionless Thin-Film Transistor on Poly-Ge0.95Sn0.05 Film Formed by Amorphous GeSn Deposition and Annealing
Cited by 36 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low-power and high-speed HfLaO-based FE-TFTs for artificial synapse and reconfigurable logic applications;Materials Horizons;2024
2. Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO2 (La:HfO2) and TaN-Based Artificial Synapses;ACS Applied Materials & Interfaces;2023-12-02
3. Three-terminal vertical ferroelectric synaptic barristor enabled by HZO/graphene heterostructure with rebound depolarization;Journal of Alloys and Compounds;2023-11
4. In situ TEM heating experiments on thin epitaxial GeSn layers: Modes of phase separation;APL Materials;2023-10-01
5. Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures;Journal of Communications Technology and Electronics;2023-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3