Electron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors-Reference-Cited by-同舟云学术

Electron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

Published:2020-01-30 Issue:8 Volume:12 Page:9656-9663
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Belete Melkamu¹,Engström Olof²,Vaziri Sam³^ORCID,Lippert Gunther⁴,Lukosius Mindaugas⁴^ORCID,Kataria Satender¹^ORCID,Lemme Max C.¹²^ORCID

Affiliation:

1. Faculty of Electrical Engineering and Information Technology, Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany

2. AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany

3. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States

4. IHP—Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany

Funder

Bundesministerium f??r Bildung und Forschung

Deutsche Forschungsgemeinschaft

European Commission

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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