Vertical Graphene-Base Hot-Electron Transistor-Reference-Cited by-同舟云学术

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Vertical Graphene-Base Hot-Electron Transistor

Published:2013-05-21 Issue:6 Volume:13 Page:2370-2375
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zeng Caifu¹,Song Emil B.¹²,Wang Minsheng¹,Lee Sejoon¹³,Torres Carlos M.¹,Tang Jianshi¹,Weiller Bruce H.²,Wang Kang L.¹

Affiliation:

1. Department of Electrical Engineering, University of California, Los Angeles, California 90095, United States

2. The Aerospace Corporation, Los Angeles, California 90009, United States

3. Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul, Seoul 100-715, Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl304541s

Reference30 articles.

1. Temperature-Dependent Transport in Suspended Graphene

2. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

3. Electric Field Effect in Atomically Thin Carbon Films

4. High-speed graphene transistors with a self-aligned nanowire gate

5. High-frequency, scaled graphene transistors on diamond-like carbon

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