Multifunctional, Room-Temperature Processable, Heterogeneous Organic Passivation Layer for Oxide Semiconductor Thin-Film Transistors-Reference-Cited by-同舟云学术

Multifunctional, Room-Temperature Processable, Heterogeneous Organic Passivation Layer for Oxide Semiconductor Thin-Film Transistors

Published:2019-12-18 Issue:2 Volume:12 Page:2615-2624
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Tak Young Jun¹,Keene Scott Tom²^ORCID,Kang Byung Ha¹,Kim Won-Gi¹,Kim Si Joon³^ORCID,Salleo Alberto²,Kim Hyun Jae³^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

2. Materials Science and Engineering, Stanford University, Stanford, California 94305, United States

3. Department of Electrical and Electronics Engineering, Kangwon National University, 1 Gangwondaehakgil, Chuncheon-si, Gangwon-do 24341, Republic of Korea

Funder

National Research Foundation of Korea

Stanford University

Semiconductor Research Corporation

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b16898

Reference36 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Thin-Film Transistors

3. A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Nitrocellulose-based collodion gate insulator for amorphous indium zinc gallium oxide thin-film transistors

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