GdFe0.8Ni0.2O3: A Multiferroic Material for Low-Power Spintronic Devices with High Storage Capacity-Reference-Cited by-同舟云学术

GdFe0.8Ni0.2O3: A Multiferroic Material for Low-Power Spintronic Devices with High Storage Capacity

Published:2019-08-02 Issue:34 Volume:11 Page:31562-31572
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chang Shu-Jui,Chung Ming-Han,Kao Ming-Yi,Lee Shang-Fan,Yu Yi-Hsing,Kaun Chao-Cheng^ORCID,Nakamura Tetsuya¹,Sasabe Norimasa¹,Chu Shang-Jui²,Tseng Yuan-Chieh^ORCID

Affiliation:

1. Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan

2. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

Funder

Ministry of Education

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b11767

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5. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

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