Artificially Fabricated Subgap States for Visible-Light Absorption in Indium–Gallium–Zinc Oxide Phototransistor with Solution-Processed Oxide Absorption Layer-Reference-Cited by-同舟云学术

Artificially Fabricated Subgap States for Visible-Light Absorption in Indium–Gallium–Zinc Oxide Phototransistor with Solution-Processed Oxide Absorption Layer

Published:2019-10-01 Issue:42 Volume:11 Page:38964-38972
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chung Jusung¹,Tak Young Jun¹,Kim Won-Gi¹,Kang Byung Ha¹,Kim Hyun Jae¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea

Funder

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b14154

Reference49 articles.

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4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Low-temperature activation under 150°C for amorphous IGZO TFTs using voltage bias

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