Role of Underlayer for Efficient Core–Shell InGaN QWs Grown on m-plane GaN Wire Sidewalls-Reference-Cited by-同舟云学术

Role of Underlayer for Efficient Core–Shell InGaN QWs Grown on m-plane GaN Wire Sidewalls

Published:2020-03-25 Issue:16 Volume:12 Page:19092-19101
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kapoor Akanksha¹^ORCID,Finot Sylvain²,Grenier Vincent¹,Robin Eric³,Bougerol Catherine²,Bleuse Joel¹,Jacopin Gwénolé²,Eymery Joël⁴^ORCID,Durand Christophe¹^ORCID

Affiliation:

1. Université Grenoble Alpes, CEA, IRIG, PHELIQS, NPSC, Grenoble 38000, France

2. Université Grenoble Alpes, CNRS, Institut Néel, Grenoble 38000, France

3. Université Grenoble Alpes, CEA, IRIG, MEM, LEMMA, Grenoble 38000, France

4. Université Grenoble Alpes, CEA, IRIG, MEM, NRS, Grenoble 38000, France

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b19314

Reference61 articles.

1. Yellow–red emission from (Ga,In)N heterostructures

2. White light emitting diodes with super-high luminous efficacy

3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

4. M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices

5. GaN based nanorods for solid state lighting

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