Genesis and Propagation of Fractal Structures During Photoelectrochemical Etching of n-Silicon-Reference-Cited by-同舟云学术

Genesis and Propagation of Fractal Structures During Photoelectrochemical Etching of n-Silicon

Author:

Richter Matthias H.¹^ORCID,Lublow Michael²,Papadantonakis Kimberly M.¹,Lewis Nathan S.¹^ORCID,Lewerenz Hans-Joachim³⁴

Affiliation:

1. Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States

2. Technische Universität Berlin, Institut für Chemie, Straße des 17. Juni 124, 10623 Berlin, Germany

3. Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125, United States

4. Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstrasse 36, 10623 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference50 articles.

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