Selective Wet Etching of Silicon Germanium in Composite Vertical Nanowires-Reference-Cited by-同舟云学术

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Selective Wet Etching of Silicon Germanium in Composite Vertical Nanowires

Published:2019-09-16 Issue:40 Volume:11 Page:36839-36846
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Baraissov Zhaslan¹²^ORCID,Pacco Antoine³,Koneti Siddardha¹²,Bisht Geeta¹²,Panciera Federico¹²,Holsteyns Frank³,Mirsaidov Utkur¹²⁴⁵^ORCID

Affiliation:

1. Department of Physics, National University of Singapore, Singapore 117551, Singapore

2. Centre for BioImaging Sciences, Department of Biological Sciences, National University of Singapore, Singapore 117557, Singapore

3. imec, Kapeldreef 75, Leuven B-3001, Belgium

4. Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546, Singapore

5. Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore

Funder

National Research Foundation Singapore

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b11934

Reference52 articles.

1. The chips are down for Moore’s law

2. Considerations for Ultimate CMOS Scaling

3. Mertens, H.; Ritzenthaler, R.; Hikavyy, A.; Kim, M.S.; Tao, Z.; Wostyn, K.; Chew, S. A.; De Keersgieter, A.; Mannaert, G.; Rosseel, E. Gate-All-Around MOSFETs Based on Vertically Stacked Horizontal Si Nanowires in a Replacement Metal Gate Process on Bulk Si Substrates. In 2016 IEEE Symposium on VLSI Technology; IEEE: 2016; pp 1–2.

4. Veloso, A.; Huynh-Bao, T.; Rosseel, E.; Paraschiv, V.; Devriendt, K.; Vecchio, E.; Delvaux, C.; Chan, B.; Ercken, M.; Tao, Z. Challenges and Opportunities of Vertical FET Devices Using 3D Circuit Design Layouts. In 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S); IEEE: 2016; pp 1–3.

5. Vertical GAAFETs for the Ultimate CMOS Scaling

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4. Enhancement of selective SiGe dissolution through facilitated surface oxidation by formation of hydroxyl radicals in peracetic acid solution;Applied Surface Science;2024-01

5. Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM;Journal of Semiconductors;2023-12-01

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