Field-Effect Transistors Based on Silicon Nanowire Arrays: Effect of the Good and the Bad Silicon Nanowires-Reference-Cited by-同舟云学术

Field-Effect Transistors Based on Silicon Nanowire Arrays: Effect of the Good and the Bad Silicon Nanowires

Published:2012-08-01 Issue:8 Volume:4 Page:4251-4258
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Bin¹,Stelzner Thomas²,Dirawi Rawi¹,Assad Ossama¹,Shehada Nisreen¹,Christiansen Silke³,Haick Hossam¹

Affiliation:

1. The Department of Chemical Engineering and the Russell Berrie Nanotechnology Institute, Technion − Israel Institute of Technology, Haifa 32000, Israel

2. Institute of Photonic Technology e.V., Albert-Einstein-Strasse 9, 07745 Jena, Germany

3. Max-Planck-Institute for the Science of Light, Günther-Scharowsky-Strasse 1, 91058 Erlangen, Germany

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am300961d

Reference41 articles.

1. Synthesis and applications of one-dimensional semiconductors

2. Nanomaterials for cross-reactive sensor arrays

3. Tuning the Electrical Properties of Si Nanowire Field-Effect Transistors by Molecular Engineering

4. Molecular Gating of Silicon Nanowire Field-Effect Transistors with Nonpolar Analytes

5. Enhanced Sensing of Nonpolar Volatile Organic Compounds by Silicon Nanowire Field Effect Transistors

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