Molecular Gating of Silicon Nanowire Field-Effect Transistors with Nonpolar Analytes-Reference-Cited by-同舟云学术

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Molecular Gating of Silicon Nanowire Field-Effect Transistors with Nonpolar Analytes

Published:2011-12-23 Issue:1 Volume:6 Page:335-345
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Paska Yair¹,Stelzner Thomas²,Assad Ossama¹,Tisch Ulrike¹,Christiansen Silke²³,Haick Hossam¹

Affiliation:

1. The Department of Chemical Engineering and Russell Berrie Nanotechnology Institute, Technion−Israel Institute of Technology, Haifa 32000, Israel

2. Institute of Photonic Technology e.V., Albert-Einstein-Straße 9, 07745 Jena, Germany

3. Max-Planck-Institute for the Science of Light, Günther-Scharowsky-Straße 1, 91058 Erlangen, Germany

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn203653h

Reference45 articles.

1. Nanomaterials for cross-reactive sensor arrays

2. Enhanced Sensing of Nonpolar Volatile Organic Compounds by Silicon Nanowire Field Effect Transistors

3. Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors

4. Semiconducting Nanowire Field-Effect Transistor Biomolecular Sensors

5. Nanowire electronic and optoelectronic devices

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