Origin of Anomalous Piezoresistive Effects in VLS Grown Si Nanowires-Reference-Cited by-同舟云学术

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Origin of Anomalous Piezoresistive Effects in VLS Grown Si Nanowires

Published:2015-02-09 Issue:3 Volume:15 Page:1780-1785
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Winkler Karl¹,Bertagnolli Emmerich¹,Lugstein Alois¹

Affiliation:

1. Institute for Solid State Electronics, TU-Wien, Floragasse 7, A-1040 Vienna, Austria

Funder

Austrian Science Fund

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl5044743

Reference50 articles.

1. Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

2. Effects of Strain on the Carrier Mobility in Silicon Nanowires

3. Stress-dependent hole effective masses and piezoresistive properties ofp-type monocrystalline and polycrystalline silicon

4. Strain induced change of bandgap and effective mass in silicon nanowires

5. Giant piezoresistance and its origin in Si(111) nanowires: First-principles calculations

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