Effects of Strain on the Carrier Mobility in Silicon Nanowires
Author:
Affiliation:
1. L_Sim, SP2M, UMR-E CEA/UJF-Grenoble 1, Institut Nanosciences et Cryogénie (INAC), Grenoble, France
2. Department ISEN, Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Lille, France
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl3010995
Reference49 articles.
1. Multiple-gate SOI MOSFETs
2. High-Performance Nanowire Electronics and Photonics on Glass and Plastic Substrates
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5. Large-Scale Integration of Semiconductor Nanowires for High-Performance Flexible Electronics
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