Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance-Reference-Cited by-同舟云学术

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Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance

Published:2020-05-15 Issue:23 Volume:12 Page:26586-26592
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Xiaochi¹,Qu Deshun²,Yuan Yahua¹,Sun Jian¹^ORCID,Yoo Won Jong²^ORCID

Affiliation:

1. School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha 410083, China

2. SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea

Funder

Hunan Provincial Science and Technology Department

National Research Foundation of Korea

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c03762

Reference31 articles.

1. Recent development of two-dimensional transition metal dichalcogenides and their applications

2. Two-dimensional semiconductors for transistors

3. Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors

4. Exfoliated multilayer MoTe2 field-effect transistors

5. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits

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2. Substitutional Doping Strategies for Fermi Level Depinning and Enhanced Interface Quality in WS₂-Metal Contacts;ACS Applied Electronic Materials;2024-05-31

3. Radiation induced changes in chemical and electronic properties of few-layer MoS2 and MoTe2 films;Applied Surface Science;2024-04

4. Realization of MoTe₂ CMOS inverter by contact doping and channel encapsulation;Japanese Journal of Applied Physics;2024-01-12

5. Recent progress in plasma modification of 2D metal chalcogenides for electronic devices and optoelectronic devices;Nanoscale;2024

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