Engineering the Threshold Switching Response of Nb2O5-Based Memristors by Ti Doping-Reference-Cited by-同舟云学术

Engineering the Threshold Switching Response of Nb2O5-Based Memristors by Ti Doping

Published:2021-01-07 Issue:2 Volume:13 Page:2845-2852
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Nath Shimul Kanti¹^ORCID,Nandi Sanjoy Kumar¹,Ratcliff Thomas¹,Elliman Robert Glen¹

Affiliation:

1. Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

Funder

Australian Research Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c19544

Reference58 articles.

1. An artificial spiking afferent nerve based on Mott memristors for neurorobotics

2. In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications

3. Mastering the game of Go with deep neural networks and tree search

4. A comprehensive review on emerging artificial neuromorphic devices

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