Gallium Doping Effects for Improving Switching Performance of p-Type Copper(I) Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

Gallium Doping Effects for Improving Switching Performance of p-Type Copper(I) Oxide Thin-Film Transistors

Published:2020-07-24 Issue:34 Volume:12 Page:38350-38356
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Bae Jun Hyeon¹²,Lee Jin Hyeok¹,Park Sung Pyo¹,Jung Tae Soo¹,Kim Hee Jun¹,Kim Dongwoo¹,Lee Seok-Woo²,Park Kwon-Shik²,Yoon SooYoung²,Kang InByeong²,Kim Hyun Jae¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

2. Research and Development Center, LG Display, E2 Block LG Science Park, 30, Magokjungang 10-ro, Gangseo-gu, Seoul 07796, Republic of Korea

Funder

LG Display

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c09243

Reference35 articles.

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5. Active layer thickness effects on the structural and electrical properties of p-type Cu2O thin-film transistors

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