Active layer thickness effects on the structural and electrical properties of p-type Cu2O thin-film transistors-Reference-Cited by-同舟云学术

Active layer thickness effects on the structural and electrical properties of p-type Cu2O thin-film transistors

Published:2012-11 Issue:6 Volume:30 Page:060605
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Nam Dong-Woo,Cho In-Tak,Lee Jong-Ho,Cho Eou-Sik,Sohn Joonsung,Song Sang-Hun,Kwon Hyuck-In

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4764110

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