WSe2 Homojunction p–n Diode Formed by Photoinduced Activation of Mid-Gap Defect States in Boron Nitride-Reference-Cited by-同舟云学术

WSe2 Homojunction p–n Diode Formed by Photoinduced Activation of Mid-Gap Defect States in Boron Nitride

Published:2020-08-20 Issue:37 Volume:12 Page:42007-42015
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Aftab Sikandar¹^ORCID,Akhtar Imtisal²,Seo Yongho²^ORCID,Eom Jonghwa¹^ORCID

Affiliation:

1. Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea

2. Department of Nanotechnology & Advance Materials Engineering, Sejong University, Seoul 05006, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c12129

Reference66 articles.

1. 2D transition metal dichalcogenides

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4. Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials

5. Mapping the layer count of few-layer hexagonal boron nitride at high lateral spatial resolutions

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