Abnormal Electron Emission in a Vertical Graphene/Hexagonal Boron Nitride van der Waals Heterostructure Driven by a Hot Hole-Induced Auger Process-Reference-Cited by-同舟云学术

Abnormal Electron Emission in a Vertical Graphene/Hexagonal Boron Nitride van der Waals Heterostructure Driven by a Hot Hole-Induced Auger Process

Published:2020-12-01 Issue:51 Volume:12 Page:57505-57513
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Yicong¹²,Li Zhibing¹³,Chen Jun¹²^ORCID

Affiliation:

1. State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Lab of Display Material and Technology, Sun Yat-sen University, Guangdong 510275, People’s Republic of China

2. School of Electronics and Information Technology, Sun Yat-sen University, Guangdong 510275, People’s Republic of China

3. School of Physics, Sun Yat-sen University, Guangdong 510275, People’s Republic of China

Funder

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Guangzhou Science Technology and Innovation Commission

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c13352

Reference37 articles.

1. A Graphene-Based Hot Electron Transistor

2. Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter

3. Improved quasiballistic electron emission from a nanocrystalline Si cold cathode with a monolayer-graphene surface electrode

4. Vertical WS2/SnS2 van der Waals Heterostructure for Tunneling Transistors

5. Approaching the Collection Limit in Hot Electron Transistors with Ambipolar Hot Carrier Transport

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