Surface Photochemical Corrosion as a Mechanism for Fast Degradation of InGaN UV Laser Diodes-Reference-Cited by-同舟云学术

Surface Photochemical Corrosion as a Mechanism for Fast Degradation of InGaN UV Laser Diodes

Published:2020-11-08 Issue:46 Volume:12 Page:52089-52094
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Marona Lucja¹²^ORCID,Wisniewski Przemek¹²,Wzorek Marek³,Smalc-Koziorowska Julita¹²,Grzanka Szymon¹²,Bojarska-Cieslinska Agata¹,Schiavon Dario¹²,Stanczyk Szymon¹²,Czerwinski Andrzej³,Czyszanowski Tomasz⁴,Perlin Piotr¹²

Affiliation:

1. Institute of High Pressure Physics PAS, Sokolowska 29/37, Warsaw 01-142, Poland

2. TOP-GAN, Solec24/90, Warsaw 00-403, Poland

3. Łukasiewicz Research Network − Institute of Electron Technology, Al. Lotników 32/46, Warsaw 02-668, Poland

4. Institute of Physics, Lodz University of Technology, Wolczanska 219, Lodz 90-924, Poland

Funder

Narodowe Centrum Badan i Rozwoju

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c11864

Reference15 articles.

1. Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

2. Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

3. Gradual facet degradation of (Al,In)GaN quantum well lasers

4. Degradation Mechanisms of InGaN Laser Diodes

5. A 271.8 nm deep-ultraviolet laser diode for room temperature operation

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1. Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging;Gallium Nitride Materials and Devices XVII;2022-03-05

2. Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High‐Power Diode Lasers;physica status solidi (RRL) – Rapid Research Letters;2021-12-13

3. New mechanisms of cavity facet degradation for GaN-based laser diodes;Journal of Applied Physics;2021-06-14