Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors
Author:
Affiliation:
1. School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China
2. School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Guangdong Province
Shenzhen Municipal Scientific Program
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c21123
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1. Towards Oxide Electronics: a Roadmap
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