Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B1–xAlxN, Al1–xGaxN, and Ga1

Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B1–xAlxN, Al1–xGaxN, and Ga1–xInxN)

Published:2020-09-18 Issue:41 Volume:12 Page:46416-46428
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wines Daniel¹^ORCID,Ersan Fatih¹²^ORCID,Ataca Can¹

Affiliation:

1. Department of Physics, University of Maryland Baltimore County, Baltimore, Maryland 21250, United States

2. Department of Physics, Aydin Adnan Menderes University, Aydin 09100, Turkey

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c11124

Reference69 articles.

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2. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

3. III-V compound SC for optoelectronic devices

4. Electric Field Effect in Atomically Thin Carbon Films

5. Computational discovery of single-layer III-V materials

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