Enhanced Ferroelectric Properties and Insulator–Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VOx-Capped Hf0.5Zr0.5O2 Thin Films-Reference-Cited by-同舟云学术

Enhanced Ferroelectric Properties and Insulator–Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VOx-Capped Hf0.5Zr0.5O2 Thin Films

Published:2020-08-12 Issue:36 Volume:12 Page:40510-40517
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Yan¹²,Fan Zhen¹²^ORCID,Wang Dao¹²,Wang Jiali¹²,Zou Zhengmiao¹²,Li Yushan¹²,Li Qiang¹²,Tao Ruiqiang¹²,Chen Deyang¹²^ORCID,Zeng Min¹^ORCID,Gao Xingsen¹^ORCID,Dai Jiyan³,Zhou Guofu²⁴^ORCID,Lu Xubing¹²^ORCID,Liu Jun-Ming¹⁵^ORCID

Affiliation:

1. Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China

2. Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China

3. Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China

4. National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, China

5. Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 21009, China

Funder

State Administration of Foreign Experts Affairs

Research Grants Council, University Grants Committee

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

South China Normal University

Guangdong Province

Science and Technology Program of Guangzhou

Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme

Guangdong Innovative Research Team Program

Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c10964

Reference56 articles.

1. Physics of thin-film ferroelectric oxides

2. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

3. Overview of emerging nonvolatile memory technologies

4. Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

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