High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach
Author:
Affiliation:
1. Department of Electronic Engineering, Hanyang University, Seoul 133-791, South Korea
2. Department of Chemical Engineering, Inha University, Incheon 22212, South Korea
Funder
Samsung
National Research Foundation of Korea
Korea Environmental Industry and Technology Institute
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c16325
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