P‐28: High‐speed Oscillator using Polycrystalline InGaO TFTs by Spray Pyrolysis on Polyimide Substrate for Flexible Electronics

Abstract

We demonstrate high‐performance coplanar thin film transistors (TFTs) on polyimide (PI) substrate, with very thin polycrystalline InGaO (poly‐IGO) thin films deposited by spray‐pyrolysis. The TFTs exhibit saturation mobility (µSAT) of ~39.25 ± 0.73 cm2 V−1 s−1, with excellent uniformity and stable bias stabilities (ΔVTH = +0.3 V for PBTS, ΔVTH = −0.3 V for NBTS). The 7‐stage ring oscillator made of the corresponding TFTs exhibits a very high oscillation frequency of 9.09 MHz at VDD of 15 V with ultra‐low propagation delay time of 7.86 ns/stage.